IRFBG20 |
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| Part Number | IRFBG20 |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor IRFBG20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 11Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 11Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 1.4 A IDM Drain Current-Single Pulsed 5.6 A PD Total Dissipation @TC=25℃ 54 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~... |
| Document |
 IRFBG20 Data Sheet
PDF 279.16KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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International Rectifier |
Power MOSFET |
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Vishay |
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International Rectifier |
Power MOSFET |
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INCHANGE |
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Vishay |
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International Rectifier |
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Vishay |
Power MOSFET |
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International Rectifier |
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International Rectifier |
SMPS MOSFET |
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International Rectifier |
Power MOSFET |
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