iscN-Channel MOSFET Transistor IRFBG20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 11Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage .
·Low drain-source on-resistance:
RDS(ON) = 11Ω (MAX)
·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1000
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
1.4
A
IDM
Drain Current-Single Pulsed
5.6
A
PD
Total Dissipation @TC=25℃
54
W
Tj
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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International Rectifier |
Power MOSFET |
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Vishay |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Vishay |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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Vishay |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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International Rectifier |
SMPS MOSFET |
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International Rectifier |
Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Vishay |
Power MOSFET |
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International Rectifier |
SMPS MOSFET |
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Vishay |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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