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·With TO-3 ·High DC Current Gain- : hFE >10@IC= 1.5A ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 180V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V.
0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A ICBO Collector Cutoff Current VCB= 24V; IE= 0 ICEO Collector Cutoff Current VCE= 24V; IE= 0 hFE DC Current Gain IC=1.5A; VCE= 5V 3DA27C MIN MAX UNIT 200 V 180 V 5 V 1 V 1.5 V 0.5 mA 1 mA 40 150 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended fo.
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | 3DA27 |
Qunli |
NPN Transistor |
|
| 2 | 3DA2073A |
FOSHAN BLUE ROCKET |
SILICON NPN TRANSISTOR |
|
| 3 | 3DA2092 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 4 | 3DA2396 |
FOSHAN BLUE ROCKET |
SILICON NPN TRANSISTOR |
|
| 5 | 3DA2688 |
Foshan Eming Electronics |
SILICON NPN TRANSISTOR |
|
| 6 | 3DA1360 |
LZG |
SILICON PNP TRANSISTOR |
|
| 7 | 3DA1360A |
LZG |
SILICON PNP TRANSISTOR |
|
| 8 | 3DA1569 |
Huajing Microelectronics |
NPN Transistor |
|
| 9 | 3DA1573 |
LZG |
SILICON NPN TRANSISTOR |
|
| 10 | 3DA1573A |
LZG |
SILICON NPN TRANSISTOR |
|
| 11 | 3DA3807 |
Huajing Microelectronics |
NPN Transistor |
|
| 12 | 3DA3807 |
Foshan Eming Electronics |
SILICON NPN TRANSISTOR |
|
| 13 | 3DA4002 |
Huajing Microelectronics |
NPN Transistor |
|
| 14 | 3DA4014 |
Huajing Microelectronics |
NPN Transistor |
|
| 15 | 3DA4382 |
LZG |
SILICON NPN TRANSISTOR |
|
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