Search by part number and manufacturer or description
IXTP4N60P |
|
Click to view a larger image
| Part Number | IXTP4N60P |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IXTP4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 10 PD Total Dissipation @TC=25℃ 89 Tj Operating Junction Temperature -55~150 Tstg Sto... |
| Document |
 IXTP4N60P Data Sheet
PDF 247.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
IXYS |
PolarHV Power MOSFET |
|
|
|
|
IXYS |
Power MOSFET |
|
|
|
|
INCHANGE |
N-Channel MOSFET |
|
|
|
|
INCHANGE |
N-Channel MOSFET |
|
|
|
|
IXYS |
Power MOSFET |
|
|
|
|
IXYS |
Power MOSFET |
|
|
|
|
INCHANGE |
N-Channel MOSFET |
|
|
|
|
IXYS |
Power MOSFET |
|
|
|
|
INCHANGE |
N-Channel MOSFET |
|
|
|
|
INCHANGE |
N-Channel MOSFET |
|