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FCH040N65S3

ON Semiconductor
Part Number FCH040N65S3
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Oct 24, 2020
Detailed Description FCH040N65S3 MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 65 A, 40 mW Description SUPERFET III MOSFET is O...
Datasheet PDF File FCH040N65S3 PDF File

FCH040N65S3
FCH040N65S3


Overview
FCH040N65S3 MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 65 A, 40 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.
This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Features • 700 V @ TJ = 150°C • Typ.
RDS(on) = 35.
4 mW • Ultra Low Gate Charge (Typ.
Qg = 136 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 1154 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar www.
onsemi.
com VDSS 650 V RDS(ON) MAX 40 mW @ 10 V ID MAX 65 A D G S POWER MOSFET G DS TO−247 LONG LEADS CASE 340CH MARKING DIAGRAM © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev.
5 $Y&Z&3&K FCH 040N65S3 $Y &Z &3 &K FCH040N65S3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: FCH040N65S3/D FCH040N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter FCH040N65S3−F155 Unit VDSS VGSS Drain to Source Voltage Gate to Source Voltage − DC − AC (f > 1 Hz) 650 V ±30 V ±30 ID IDM EAS IAS EAR dv/dt Drain Current Drain Current Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 1) MOSFET dv/dt − Continuous (TC = 25°C) − Continuous (TC = 100°C) − Pulsed (Note 1) 65 41 162.
5 358 8.
1 4.
17 100 A A mJ A mJ V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) − Derate Above...


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