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2N0609

Part Number	2N0609
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 19, 2020
Detailed Description	isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.1mΩ ·100% avalanche tested ·Min...
Datasheet	2N0609 PDF File

Overview

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.
1mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 100 A PD Total Dissipation @TC=25℃ 190 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 0.
79 UNIT ℃/W 2N0609 isc website：www.
iscsemi.
cn...

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