N-channel Power MOSFET - STMicroelectronics
Description
STW60NM50N
N-channel 500 V, 0.
035 Ω, 68 A, MDmesh™ II Power MOSFET in a TO-247 package
Datasheet - production data
Features
3 2 1
TO-247
Order code VDSS (@Tjmax) RDS(on) max ID
STW60NM50N
550 V
<0.
043 Ω 68 A
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance
Applications
• Switching applications
Figure 1.
Internal schematic diagram
'
*
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency converters.
6
$0Y
Order codes STW60NM50N
Table 1.
Device summary
Marking
Packages
60NM50N
TO-247
Packaging Tube
April 2013
This is information on a product in full production.
DocID023157 Rev 2
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Contents
Contents
STW60NM50N
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Electrical ratings .
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Electrical characteristics .
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1 Electrical characteristics (curves) .
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Test circuits .
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Package mechanical data .
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Revision history .
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DocID023157 Rev 2
STW60NM50N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
VGS ID ID IDM (1) PTOT dv/dt (2)
Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode ...
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