N-channel Power MOSFET - STMicroelectronics
Description
STB15NM60ND - STF/I15NM60ND STP15NM60ND - STW15NM60ND
N-channel 600 V - 0.
27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
Features
Type
VDSS (@Tjmax) RDS(on) max ID
STB15NM60ND STF15NM60ND STI15NM60ND STP15NM60ND STW15NM60ND
650 V
0.
299 Ω
14 A 14 A 14 A(1) 14 A 14 A
1.
Limited only by maximum temperature allowed
■ The worldwide best RDS(on)* area amongst the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.
Strongly recommended for bridge topologies, in ZVS phase-shift converters.
3 1
D2PAK
3 2 1
TO-220
3 2 1
TO-247
123
I²PAK
3 2 1
TO-220FP
Figure 1.
Internal schematic diagram
Table 1.
Device summary Order codes
Marking
STB15NM60ND STF15NM60ND STI15NM60ND STP15NM60ND STW15NM60ND
15NM60ND 15NM60ND 15NM60ND 15NM60ND 15NM60ND
April 2008
Rev 2
Package D2PAK TO-220FP I2PAK TO-220 TO-247
Packaging
Tape and reel Tube Tube Tube Tube
1/19
www.
st.
com
19
Contents
Contents
STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND
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Electrical ratings .
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Electrical characteristics .
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Test circuit .
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Package mechanical data .
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Packaging mechanical data .
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14
6
Revisio...
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