isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤600mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Improved transconductance
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
7. 6
IDM
Drain Current-Single Pulsed
22. 8
PD
Total Dissipation @TC=25℃
83
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 1. 5 75
UNIT ℃/W ℃/W
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isc N-Channel MOSFET Transistor SPD08N50C3,ISPD08N50C3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=250μA
500
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=350μA
2. 1
V
3. 9
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=4. 6A
600 mΩ
IGSS
Gate-Source Leakage Current
VGS= 20V
IDSS
Drain-Source Leakage Current
VDS=500V; VGS= 0V
VSD
Diode forward voltage
IF=IS, VGS = 0V
0. 1
μA
1
μA
1. 2
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or gua...
SPD08N50C3 PDF File
