Power Transistor - Infineon
Description
SIPMOS® Power Transistor
Features • N channel • Enhancement mode • Avalanche rated
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
• dv/dt rated
SPD 07N20 G
VDS
200 V
RDS(on) 0.
4 Ω
ID
7A
1 23
2
1 3
Type SPD07N20 G SPU07N20 G
Package PG-TO252 PG-TO251
Pb-free Yes Yes
Packaging Tape and Reel Tube
Pin 1 Pin 2 Pin 3
G
D
S
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC = 25 ˚C
TC = 100 ˚C
Pulsed drain current TC = 25 ˚C Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 Ω
IDpulse EAS
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
EAR dv/dt
IS = 7 A, VDS = 160 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1
VGS Ptot
Tj , Tstg
Value
7 4.
5 28
120
4 6
±20 40
-55.
.
.
+175 55/150/56
Unit A
mJ
kV/µs V W ˚C
Rev.
2.
5
Page 1
2013-06-27
SPD 07N20 G
Thermal Characteristics Parameter
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area1)
Symbol
Values
Unit
min.
typ.
max.
RthJC RthJA RthJA
-
3.
1 K/W
-
- 100
-
-
75
-
-
50
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage VGS = 0 V, ID = 0.
25 mA
V(BR)DSS 200
-
-V
Gate threshold voltage, VGS = VDS ID = 1 mA Zero gate voltage drain current
VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C
VGS(th)
2.
1
3
4
IDSS
µA
-
0.
1 1
-
- 100
Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 4.
5 A
IGSS
-
10 100 nA
RDS(on)
Ω
-
0.
3 0.
4
1 Device on 40mm*40mm*1.
5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connect...
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