N-Channel MOSFET - ON Semiconductor
Description
FDP053N08B — N-Channel PowerTrench® MOSFET
FDP053N08B
N-Channel PowerTrench® MOSFET
80 V, 120 A, 5.
3 mΩ
Features
• RDS(on) = 4.
2 mΩ (Typ.
) @ VGS = 10 V, ID = 75 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 62.
5 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant
Description
This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been tai-lored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
Parameter
VDSS VGSS
ID
IDM EAS dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 3)
TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
* Package limitation current is 75A.
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP053N08B 80 ±20 120*
85.
2* 75 480 365 6.
0 146 0.
97
-55 to +175 300
FDP053N08B 1.
03 62.
5
Unit V V
A
A mJ V/ns W W/oC oC oC
Unit oC/W
©2012 Semiconductor Components Industries, LLC.
October-2017,Rev.
3
Publication Order Number: FDP053N08B/D
FDP053N08B — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Part Number FDP053N08B-F102
Top Mark FDP053N08B
Package TO-220
Packing Method Tube
Reel Size N/A
Tape Width N/A
Electrical Chara...
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