Power MOSFET - Vishay
Description
www.
vishay.
com
IRF9Z20, SiHF9Z20
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration
-50 VGS = -10 V
26 6.
2 8.
6 Single
0.
28
TO-220AB
S G
S D G
D P-Channel MOSFET
FEATURES
• P-channel versatility
• Compact plastic package
• Fast switching
• Low drive current
• Ease of paralleling
• Excellent temperature stability
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of the power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
The P-channel power MOSFETs are designed for application which require the convenience of reverse polarity operation.
They retain all of the features of the more common N-channel power MOSFETs such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability.
P-channel power MOSFETs are intended for use in power stages where complementary symmetry with N-channel devices offers circuit simplification.
They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection.
Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers.
ORDERING INFORMATION
Package Lead (Pb)-free
TO-220AB IRF9Z20PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a Linear Derating Factor
VDS
VGS
VGS at - 10 V
TC = 25 °C TC = 100 °C
ID
IDM
Inductive Current, Clamped Unclamped Inductive Current (Avalanche current) Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) c
L = 100 μH TC = 25 °C
for 10 s
ILM IL PD ...
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