·Low drain-source on-resistance: RDS(on) ≤13.8mΩ. (VGS = 10 V)
·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Switchi...
TK32E12N1 PDF File
