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TK4R3E06PL

Part Number	TK4R3E06PL
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Features	·Low drain-source on-resistance: RDS(on) ≤4.3mΩ. (VGS = 10 V) ·Enhancement mode: Vth =1.5 to 2.5V (VDS = 10 V, ID=0.5mA)...
Published	Oct 4, 2020
Datasheet	TK4R3E06PL PDF File

Features

·Low drain-source on-resistance: RDS(on) ≤4.3mΩ. (VGS = 10 V) ·Enhancement mode: Vth =1.5 to 2.5V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switchin...

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