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SPW11N60C3

Part Number	SPW11N60C3
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 4, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60C3 ISPW11N60C3 ·FEATURES ·Static drain-source on-resist...
Datasheet	SPW11N60C3 PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60C3 ISPW11N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 125 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) ...

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