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IRLZ24N

Part Number	IRLZ24N
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 4, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ24N， IIRLZ24N ·FEATURES ·Static drain-source on-resistance:...
Datasheet	IRLZ24N PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ24N， IIRLZ24N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
06Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 72 PD Total Dissipation @TC=25℃ 45 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CH...

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