DatasheetsPDF.com

2SC2579

Part Number	2SC2579
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 19, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearity ...
Datasheet	2SC2579 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2579 isc website...

Similar Datasheet

2SC2500 TRANSISTOR - Toshiba Semiconductor
2SC2500 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SC2500 NPN Transistor - JCET
2SC2501 NPN Transistor - INCHANGE
2SC2502 NPN Transistor - INCHANGE
2SC2504 Transistor - Shindengen
2SC2506 Transistor - SHINDENGEN
2SC2508 Silicon NPN POWER TRANSISTOR - HGSemi
2SC2508 Silicon NPN Transistor - Toshiba
2SC2509 Silicon NPN epitaxial planar type Transistor - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)