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2SC2578

Part Number	2SC2578
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 19, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) ·Good Linearity ...
Datasheet	2SC2578 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1103 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2578 isc we...

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