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2SC2564

Part Number	2SC2564
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 19, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 140V(Min) ·Good Linea...
Datasheet	2SC2564 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1094 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IE Emitter Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ...

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