DatasheetsPDF.com

2SC2562

Part Number	2SC2562
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 19, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SC2562 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= 0.4(V)(Max)@IC= 3A ·...
Datasheet	2SC2562 PDF File

Overview

isc Silicon NPN Power Transistor 2SC2562 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= 0.
4(V)(Max)@IC= 3A ·High Switching Speed ·Complement to Type 2SA1012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc websi...

Similar Datasheet

2SC2500 TRANSISTOR - Toshiba Semiconductor
2SC2500 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SC2500 NPN Transistor - JCET
2SC2501 NPN Transistor - INCHANGE
2SC2502 NPN Transistor - INCHANGE
2SC2504 Transistor - Shindengen
2SC2506 Transistor - SHINDENGEN
2SC2508 Silicon NPN POWER TRANSISTOR - HGSemi
2SC2508 Silicon NPN Transistor - Toshiba
2SC2509 Silicon NPN epitaxial planar type Transistor - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)