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2SB1381 |
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| Part Number | 2SB1381 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -2.5A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2.5A, IB= -... |
| Features |
isc Silicon PNP Darlington Power Transistor
2SB1381
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2.5A; IB= -5mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -2.5A; IB= -5mA
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE-1
DC Current Gain
IC= -2.5A; VCE= -3V
hFE-2
DC Current Gain
IC= -7A; VCE= -3V
Sw... |
| Document |
 2SB1381 Data Sheet
PDF 210.42KB |
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