TXDV812 Thyristor

TXDV812 Thyristor

·With TO-220 packaging ·High operating junction temperature ·Very high commutation performancemaximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating a.

Features

petitive peak off-state current VD=VDRM Rated; Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=17A,tP=380μs Ⅰ VD =12V;RL=33Ω Ⅱ Ⅲ VD =12V;RL=33Ω MIN MAX UNIT 0.01 2 mA 1.95 V 100 100 mA 100 1.5 V isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor TXDV812 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are inte.