TTA1452B |
|
Part Number | TTA1452B |
Manufacturer | INCHANGE |
Description | ·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·Low collector-emitter saturation voltage: VCE(sat)≤ -0.4V@IC= -6A; IB= -300mA ·Minimum Lot-to-Lot variations for robust device performance and... |
Features |
CE(sat)
Collector-Emitter Saturation Voltage
IC= -6A; IB= -300mA
VBE(sat)
Base-Emitter Saturation Voltage
IC= -6A; IB= -300mA
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -80V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -1V
hFE-2
DC Current Gain
IC= -6A; VCE= -1V
TTA1452B
MIN TYP MAX UNIT
-80
V
-0.4
V
-1.2
V
-5
μA
-5
μA
120
240
40
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications... |
Datasheet |
TTA1452B Data Sheet
PDF 203.50KB |
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
|
|
INCHANGE |
PNP Transistor |
|
|
|
Toshiba |
Silicon PNP Transistor |
|
|
|
Toshiba Semiconductor |
Silicon PNP Transistor |
|
|
|
Toshiba |
Silicon PNP Transistor |
|
|
|
Toshiba |
Silicon PNP Transistor |
|
|
|
nELL |
Silicon PNP Transistor |
|
|
|
INCHANGE |
PNP Transistor |
|
|
|
INCHANGE |
PNP Transistor |
|
|
|
Toshiba Semiconductor |
Silicon PNP Transistor |
|
|
|
INCHANGE |
PNP Transistor |
|