TTA0001 Datasheet (PDF), Stock and Price, INCHANGE Transistor, Distributor

TTA0001 PNP Transistor

·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTC0001 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications .

Features

down Voltage IC= -50mA ; IB= 0 -160 V VCE(sat) Collector-Emitter Saturation Voltage IC= -9A; IB= -0.9A -2.0 V VBE(on) Base-Emitter On Voltage IC= -9A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -160V ; IE=0 -1.0 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -1.0 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 80 160 hFE-2 DC Current Gain IC= -9A ; VCE= -5V 35 COB Output Capacitance IE=0 ; VCB= -10V;ftest= 1.0MHz 410 pF fT Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V 30 MHz Notice： ISC reserves the rights to make changes of the content herein the dat.

No.	Part #	Manufacture	Description
1	TTA0001	Toshiba Semiconductor	Silicon PNP Transistor
2	TTA0002	INCHANGE	PNP Transistor
3	TTA0002	Toshiba Semiconductor	Silicon PNP Transistor
4	TTA003	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
5	TTA004	Toshiba	Silicon PNP Epitaxial Type Transistor
6	TTA004B	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
7	TTA005	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
8	TTA006B	Toshiba	Silicon PNP Transistors
9	TTA007	Toshiba Semiconductor	Silicon PNP Transistor
10	TTA008B	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
11	TTA009	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
12	TTA010	Toshiba	Silicon PNP Triple-Diffused Type Bipolar Transistors
13	TTA011	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
14	TTA012	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
15	TTA013	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors

TTA0001 PNP Transistor

TTA0001 PNP Transistor

Features

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