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BU2525DF

Part Number	BU2525DF
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·Built-in Damper Diode ·Minimum Lot-to...
Datasheet	BU2525DF PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Base Voltage VBE= 0 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.
5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 8 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 45 W 150 ℃ Tstg St...

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