isc
Silicon NPN Darlington
Power Transistor
INCHANGE Semiconductor
BD683
DESCRIPTION ·Collector–Emitter Breakdown
Voltage—
: V(BR)CEO = 120V(Min
.) ·DC Current Gain—
: hFE = 750(Min)@ IC= 1
.5A ·Complement to Type BD684 ·Minimum Lot-to-Lot variations...