This 60V, 1.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) 4 TC = 25° C, ID = 100 A 3.5 TC = 125° C, ID = 100 A 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to-Source Voltage (V).
• Ultra-low Qg and Qgd
• Low thermal resistance
• Avalanche rated
• Pb-free terminal plating
• RoHS compliant
• Halogen free
• TO-220 plastic package
2 Applications
• Secondary side synchronous rectifier
• Motor control
3 Description
This 60V, 1.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Drain (Pin 2)
Gate (Pin 1)
Source (Pin 3)
4
TC = 25° C, ID = 100 A
3.5
TC = 125° C, ID = 100 A
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
RDS(on) vs VGS
Product Summary
TA = 25°C
TYPICAL VALUE
.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | CSD18536KTT |
Texas Instruments |
N-Channel MOSFET | |
2 | CSD18531Q5A |
Texas Instruments |
N-Channel MOSFET | |
3 | CSD18532KCS |
Texas Instruments |
60V N-Channel MOSFET | |
4 | CSD18532NQ5B |
Texas Instruments |
N-Channel MOSFET | |
5 | CSD18532Q5B |
Texas Instruments |
N-Channel MOSFET |