This 11 mΩ, 60 V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resis.
•1 Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• TO-220 Plastic Package
2 Applications
• High Side Synchronous Buck Converter
• Motor Control
3 Description
This 11 mΩ, 60 V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Drain (Pin 2)
Gate (Pin 1)
Source (Pin 3)
Product Summary
TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
60
14
2.3
VGS .
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | CSD18537NQ5A |
Texas Instruments |
N-Channel MOSFET | |
2 | CSD18531Q5A |
Texas Instruments |
N-Channel MOSFET | |
3 | CSD18532KCS |
Texas Instruments |
60V N-Channel MOSFET | |
4 | CSD18532NQ5B |
Texas Instruments |
N-Channel MOSFET | |
5 | CSD18532Q5B |
Texas Instruments |
N-Channel MOSFET |