2ED2304S06F Datasheet

2ED2304S06F 650V Half Bridge Gate Driver

The 2ED2304S06F is a 650-V half-bridge gate driver. Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V. The output drivers features a high pulse current buffer stage d.

Features

 Infineon thin-film-SOI-technology
 Fully operational to +650 V
 Floating channel designed for bootstrap operation
 Output source/sink current capability +0.36 A/-0.7 A
 Integrated Ultra-fast, low RDS(ON) Bootstrap Diode
 Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology
 10 ns typ., 60 ns max. propagation delay matching
 dV/dt immune ±50 V
 Gate drive supply range from 10 V to 20 V
 Undervoltage lockout for both channels
 3.3 V, 5 V and 15 V input logic compatible
 RoHS compliant Product summary VOFFSET IO+/- (typ.) VOUT Delay.