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MTBB5N10L3

Part Number	MTBB5N10L3
Manufacturer	CYStech
Description	N-Channel Enhancement Mode Power MOSFET
Features	RDSON@VGS=4.5V, ID=5A • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package 100V...
Published	Apr 3, 2020
Datasheet	MTBB5N10L3 PDF File

Features

RDSON@VGS=4.5V, ID=5A
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package 100V 5A 129mΩ (typ.) 134mΩ (typ.) 136mΩ (typ.) Equivalent Circuit MTBB5N10L3 G：Gate D：Drain S：Source Outline SOT-223 D S D G Orderi...

Similar Datasheet

MTBB5N10L3 N-Channel Enhancement Mode Power MOSFET - CYStech

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