AOTF7S65 Datasheet

AOTF7S65 Power Transistor

Product Summary The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche .

Features

D IDM IAR EAR EAS 7 5 TC=25°C Power Dissipation B Derate above 25oC PD 104 0.8 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT7S65L/AOB7S65L 65 0.5 Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 1.2 AOTF7S65 650 ±30 7* 5* 30 1.7 43 86 35 0.3 100 20 -55 to 150 300 AOTF7S65 65 -3.6 G S AOTF7.