STGW80H65DFB IGBT

STGW80H65DFB IGBT

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the s.

Features

• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
• Tight parameter distribution
• Safe paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode Applications
• Photovoltaic inverters
• High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise betwee.