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FDS6675BZ |
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| Part Number | FDS6675BZ |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Mana... |
| Features |
• Max RDS(on) = 13 mW at VGS = −10 V, ID = −11 A • Max RDS(on) = 21.8 mW at VGS = −4.5 V, ID = −9 A • Extended VGS Range (−25 V) for Battery Applications • HBM ESD Protection Level of 5.4 kV Typical (Note 3) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • This Device is Pb−Free and RoHS Compliant Specifications MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous (Note 1a) − Pulsed −30 V ±25 V A −11 −55 PD Power D... |
| Document |
 FDS6675BZ Data Sheet
PDF 396.61KB |
| Distributor | Stock | Price | Buy |
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