FDS6685 P-Channel MOSFET

FDS6685 P-Channel MOSFET

Features This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). • –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ V.

Features

This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V
  – 25V).
•
  –8.8 A,
  –30 V RDS(ON) = 20 mΩ @ VGS =
  –10 V RDS(ON) = 35 mΩ @ VGS =
  –4.5 V
• Low gate charge (17nC typical) Applications
• Fast switching speed
• Power management
• Load switch
• Battery protection
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ra.