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AP1A003P |
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| Part Number | AP1A003P |
| Manufacturer | Advanced Power Electronics |
| Description | AP416A00403sesreierisesaarerefrforomm AAddvvaanncceedd PPoowweerr innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provi... |
| Features |
otherwise specified)
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TC=25℃ IDM
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V4(Silicon Limited) Drain Current, VGS @ 10V4(Silicon Limited) Drain Current, VGS @ 10V4 Pulsed Drain Current1
30 V +20 V 189 A 133 A 120 A 520 A
PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range
125 2.4 125 -55 to 175 -55 to 175
W W mJ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
... |
| Document |
 AP1A003P Data Sheet
PDF 204.75KB |
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