SJT688APPN Datasheet

SJT688APPN PNP SILICON TRANSISTOR

SJT688APPN is PNP silicon transistor fabricated with Silan planar transistor technology, The advanced technology of multilayer epitaxy, ultra-low density of crystal defects, polyimide passivation, and thin chip of less than 200 microns makes low thermal resistance, large power dissipation and good .

Features

 High breakdown voltage margin  Very low leakage current  High output power: 80W  High secondary breakdown tolerance and reliability NOMENCLATURE ORDERING INFORMATION Part No. SJT688APPN Package TO-3P Marking 688A Material Pb free Packing Tube ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted) Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector Current Base Current Operating Junction Temperature Range Symbol BVCEO BVEBO BVCBO IC IB TJ -120 -5 -120 Rating -10 -1 -55~+150 IC=5mA, IB=0 IE=1mA, IC=0 IC.