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AP65PN1R4P

Advanced Power Electronics
Part Number AP65PN1R4P
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Mar 5, 2020
Detailed Description Advanced Power Electronics Corp. AP65PN1R4P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & U...
Datasheet PDF File AP65PN1R4P PDF File

AP65PN1R4P
AP65PN1R4P


Overview
Advanced Power Electronics Corp.
AP65PN1R4P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic D ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S Description AP65PN1R4 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220 package is widely preferred for all commercial-industrial through hole applications.
The low thermal resistance and low package cost contribute to the worldwide popular package.
BVDSS RDS(ON) ID G DS 650V 1.
45Ω 7A TO-220(P) Absolute Maximum Ratings@Tj=25o.
C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range 650 +30 7 3.
3 16 104 2 13.
5 -55 to 150 -55 to 150 V V A A A W W mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 1.
2 62 Units ℃/W ℃/W 1 201612072 AP65PN1R4P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVDSS RDS(ON) Drain-Source Breakdown Voltage VGS=0V, ID=250uA Static Drain-Source On-Resistance2 VGS=10V, ID=3A VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=3A IDSS Drain-Source Leakage Current VDS=480V, VGS=0V IGSS Gate-Source Leakage VGS=+30V, VDS=0V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on De...


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