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BT151-650LTN

WeEn
Part Number BT151-650LTN
Manufacturer WeEn
Description SCR
Published Mar 5, 2020
Detailed Description BT151-650LTN SCR Rev - 01 28 January 2019 Product data sheet 1. General description Planar passivated Silicon Controll...
Datasheet PDF File BT151-650LTN PDF File

BT151-650LTN
BT151-650LTN



Overview
BT151-650LTN SCR Rev - 01 28 January 2019 Product data sheet 1.
General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring good bidirectional blocking voltage and high current surge capability with high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C).
2.
Features and benefits • High junction operating temperature capability (Tj(max) = 150 °C) • Good bidirectional blocking voltage capability • High current surge capability • High thermal cycling performance • Planar passivated for voltage ruggedness and reliability 3.
Applications • • • • • • Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation High junction operating temperature capability (Tj(max) = 150 °C) 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Absolute maximum rating VRRM repetitive peak reverse voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current Tj junction temperature Conditions half sine wave; Tmb ≤ 134 °C; Fig.
1; Fig.
2; Fig.
3 half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig.
4; Fig.
5 half sine wave; Tj(init) = 25 °C; tp = 8.
3 ms Values 650 12 120 132 150 Unit V A A A °C WeEn Semiconductors Symbol Parameter Static characteristics IGT gate trigger current IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage Conditions VD = 12 V; IT = 0.
1 A; Tj = 25 °C; Fig.
7 VD = 12 V; Tj = 25 °C; Fig.
9 IT = 12 A; Tj = 25 °C; Fig.
10 VDM = 436 V; Tj = 150 °C; RGK= 100 Ω; (VDM = 67% of VDRM); exponential waveform; 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1K cathode 2A anode 3G mb A gate mounting base; connected to anode Simplified outline mb BT151-650LTN SCR Min Typ Max Unit 1.
5 - 5 mA - - 20 mA - 1.
15 1.
5 V 500 1000 - V/μs Graphic symbol AK G sym037 123 6.
...



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