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BT139B-600G

WeEn
Part Number BT139B-600G
Manufacturer WeEn
Description 4Q Triac
Published Mar 5, 2020
Detailed Description BT139B-600G 4Q Triac Rev.02 - 25 April 2019 Product data sheet 1. General description Planar passivated four quadrant ...
Datasheet PDF File BT139B-600G PDF File

BT139B-600G
BT139B-600G


Overview
BT139B-600G 4Q Triac Rev.
02 - 25 April 2019 Product data sheet 1.
General description Planar passivated four quadrant triac in a TO263 (D2PAK) surface-mountable plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.
Typical applications include motor control, industrial and domestic lighting, heating and static switching.
2.
Features and benefits • High blocking voltage capability • Less sensitive gate for improved noise immunity • Planar passivated for voltage ruggedness and reliability • Surface-mountable package • Triggering in all four quadrants 3.
Applications • General purpose motor control • General purpose switching 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Absolute maximum rating VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current Tj junction temperature Symbol Parameter Static characteristics IGT gate trigger current Conditions full sine wave; Tmb ≤ 99 °C; Fig.
1; Fig.
2; Fig.
3 full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Conditions VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 Min Typ Max Unit - - 600 V - - 16 A - - 155 A - - 170 A - - 125 °C Min Typ Max Unit - 5 50 mA - 8 50 mA - 10 50 mA WeEn Semiconductors Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dVcom/dt rate of charge of commutating voltage Conditions VD = 12 V; IT = 0.
1 A; T2- G+; Tj = 25 °C; Fig.
7 VD = 12 V; Tj = 25 °C; Fig.
9 IT = 20 A; Tj = 25 °C; Fig.
10 VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit VD = 400 V; Tj = 95 °C; dIcom/dt = 7.
2 A/ ms; IT = 16 A; gate open circuit 5.
Pinning information Tabl...


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