PSBDAF60V5 Schottky Barrier diode

PSBDAF60V5 Schottky Barrier diode

PSBDBFXXXV5 Schottky Barrier diode Feature ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protection app.

Features

IF(AV) 5.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed IFSM 150 A on Rated Load (JEDEC method) Max Instantaneous Forward Voltage at 5 A VF 0.45 0.55 0.70 0.85 V Rev.06 1 www.prisemi.com Schottky Barrier diode Absolute maximum rating@25℃ PSBDBFXXXV5 Parameter PSBDA PSBDA PSBDA PSBDA PSBDA PSBDA PSBDA PSBDA Symbol Units F20V5 F40V5 F60V5 F80V5 F100V5 F120V5 F150V5 F200V5 Maximum DC Reverse Current Ta = 25°C at Rated DC Reverse Voltage Ta =100°C Typical Junction Capacitance 1） Typical Thermal Resistance 2） Operating Junction Temperature Range S.