PPM8PN30V12 Datasheet

PPM8PN30V12 P-Channel MOSFET

The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ) ＜30@ VGS=-4.5V ＜18@ VGS=-10V Top View (PDFN3.3*3.3-8L ) D D DD 8765 ID(A) -12 PPM8PN30V12 P-Channel MOSFET Internal Structure D（5、6、7、8） G（4） 1 234.

Features

EAS PD PD TJ TSTG RθJA RθJC Maximum -30 ±25 -12 -8.5 -80 -33 -21 -3 -24 29 3.1 2 29 12 150 -55 to 150 40 75 4.2 Rev.06.2 1 Units V V A A A A A mJ W W ℃ ℃/W www.prisemi.com P-Channel MOSFET PPM8PN30V12 Electrical characteristics per line @25℃(unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capac.