PPMET20V08 P-Channel MOSFET

PPMET20V08 P-Channel MOSFET

The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.85@ VGS=-4.5V -0.8 1.2@ VGS=-2.5V -0.5 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown.

Features

1 μA - - ±1 uA -0.35 -1 V - - 0.85 Ω - - 1.2 Ω 6.5 S - 200 - 80 - 150 pF pF pF - 17 ns - 65 ns Rev.06.2 1 www.prisemi.com P-Channel MOSFET Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed TA=25℃ Total Power Dissipation TA=125℃ Symbol VDS VGS ID ID PD PD PPMET20V08 Value -20 ±8 -0.8 -3 250 200 Units V V A A mW mW ID
  – Drain Current (A) Typical Characteristics 1.0 0.8 VGS=2.5V 0.6 VGS=2.0V 0.4 0.2 VGS=1.5V ID
  – Drain Current (A) 1.0 0.8 0.6 0.4 0.2 T=25°C T=55°C T=125°C RDS(on)
  – Drain-to-Source Resistance(Ω) .