PPM3FD20V1E Datasheet

PPM3FD20V1E P-Channel MOSFET

The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(mA) 0.45@ VGS=-4.5V 0.62@ VGS=-2.5V -800 0.86@ VGS=-1.8V PPM3FD20V1E P-Channel MOSFET Top View Absolute maximum rating@25℃ Parameter Drain-S.

Features

Typ. 350 395 390 450 245 Max. 400 460 445 515 290 Units °C/W °C/W °C/W °C/W °C/W Rev.06.7 1 www.prisemi.com P-Channel MOSFET PPM3FD20V1E Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS ID =-250uA,VGS=0V Zero Gate Voltage Drain Current IDSS VDS =-16V,VGS=0V Gate-to-source Leakage Current IGSS VDS =0V,VGS=±8V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS = VDS, ID = -250uA VGS=-4.5V, ID =-700mA Drain-to-source On-resistance (Note 5) RDS(ON) VGS=-2.5V, I.