PPMT30V4 |
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| Part Number | PPMT30V4 |
| Manufacturer | Prisemi |
| Description | The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) -30 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.053 @ VGS=-10V 0.065@ VGS=-4.5V -4.2 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Vol... |
| Features |
-
-V
- - -1 μA
-
-
±100
nA
-0.7 -1.3 V
- 53 60 mΩ
- 65 75 mΩ
86 120 mΩ
7 11
S
- 950 - 110 - 75
pF pF pF
- 20 ns - 35 ns
Absolute maximum rating@25℃
Parameter
Thermal Resistance, Junction-to-Ambient (Note 2)
Symbol
RθJA
Rev.06.4
1
Value
104
Units
℃/W
www.prisemi.com
P-Channel MOSFET
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Typical Characteristics
1.75
TA=-25℃
1.5
1 0.5
ID – Drain Current (A) Symbol VDS VGS ID ID PD TJ,T... |
| Datasheet |
 PPMT30V4 Data Sheet
PDF 256.67KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Prisemi |
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Prisemi |
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PEAK |
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PEAK |
DC/AC Converter |
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PEAK |
DC/AC Converter |
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PEAK |
DC/AC Converter |
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PEAK |
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PEAK |
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Prisemi |
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Prisemi |
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WILLAS |
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