2SK2532 N-Channel Silicon MOSFET

2SK2532 N-Channel Silicon MOSFET

Ordering number : EN5457 2SK2532 SANYO Semiconductors DATA SHEET 2SK2532 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • High-speed diode. • Enables simplified fabrication, high-density mounding, and miniaturization in end products due to t.

Features

• Low ON-resistance.
• High-speed diode.
• Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Vo.