BTN5551K3 General Purpose NPN Epitaxial Planar Transistor

BTN5551K3 General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN5551K3 Spec. No. : C208K3 Issued Date : 2012.06.28 Revised Date : 2012.10.02 Page No. : 1/6 Features • High breakdown voltage, BVCEO≥ 160V • Pb-free lead plating package Symbol BTN5551K3 Outline TO-92L B：Base C：Collect.

Features

• High breakdown voltage, BVCEO≥ 160V
• Pb-free lead plating package Symbol BTN5551K3 Outline TO-92L B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range Note : Pulse test, pulse width≤300μs, duty cycle≤2% Symbol VCBO VCEO VEBO IC ICP IB PD RθJA Tj ; Tstg Limits 180 160 6 600 2 (Note) 200 900 139 -55~+150 Unit V V V mA A mA mW °C/W.