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BTD2114N3

CYStech
Part Number BTD2114N3
Manufacturer CYStech
Description High Current Gain Medium Power NPN Epitaxial Planar Transistor
Published Jan 22, 2020
Detailed Description CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No. : 1/8 High Cu...
Datasheet PDF File BTD2114N3 PDF File

BTD2114N3
BTD2114N3

Overview
CYStech Electronics Corp.
Spec.
No.
: C857N3 Issued Date : 2012.
01.
02 Revised Date : 2017.
12.
05 Page No.
: 1/8 High Current Gain Medium Power NPN Epitaxial Planar Transistor AUDIO MUTING APPLICATION BTD2114N3 BVCEO IC 20V 500mA RCE(SAT) 0.
32Ω(typ) Features • High Emitter-Base voltage, VEBO=12V(min).
• High DC current gain, hFE=1200(min.
) @VCE=3V, IC=10mA.
• Low VCESAT, VCESAT=0.
16V typ.
@ IC=500mA, IB=20mA.
• Pb-free and halogen-free package.
Symbol BTD2114N3 Outline SOT-23 C B：Base C：Collector E：Emitter E B Ordering Information Device BTD2114N3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade...


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