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EPC2029

Part Number	EPC2029
Manufacturer	EPC
Description	Power Transistor
Published	Nov 27, 2019
Detailed Description	eGaN® FET DATASHEET EPC2029 – Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 3.2 mΩ ID , 48 A D G S EPC2029 ...
Datasheet	EPC2029 PDF File

Overview

eGaN® FET DATASHEET EPC2029 – Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 3.
2 mΩ ID , 48 A D G S EPC2029 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VALUE VDS Drain-to-Source Voltage (Continuous) Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) ID Continuous (TA = 25°C,...

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