SiJA52DP N-Channel MOSFET

SiJA52DP N-Channel MOSFET

www.vishay.com SiJA52DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max. 0.0017 at VGS = 10 V 0.0023 at VGS = 4.5 V ID (A) a, g 60 60 PowerPAK® SO-8L Single Qg (Typ.) 47.5 nC D 6.15 mm 1 5.13 mm 1 2S 3S 4S G Top View Bottom View Ordering Informa.

Features

• TrenchFET® Gen IV power MOSFET
• Tuned for the lowest RDS-Qoss FOM
• 100 % Rg and UIS tested
• Qgd / Qgs ratio < 1 optimizes switching characteristics
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Synchronous rectification
• ORing
• High power density DC/DC
• VRMs and embedded DC/DC G
• DC/AC inverters
• Load switch N-Channel MOSFET D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current.