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6R199P

Infineon
Part Number 6R199P
Manufacturer Infineon
Description Power Transistor
Published Oct 24, 2019
Detailed Description CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High ...
Datasheet PDF File 6R199P PDF File

6R199P
6R199P


Overview
CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max@T j= 25°C Q g,typ IPA60R199CP 650 V 0.
199 Ω 32 nC PG-TO220 CoolMOS CP is designed for: • Hard switching SMPS topologies Type IPA60R199CP Package PG-TO220 Marking 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current2) Pulsed drain current3) Avalanche energy, single pulse Symbol Conditions I D T C=25 °C T C=100 °C I D,pulse T C=25 °C E AS I D=6.
6 A, V DD=50 V Avalanche energy, repetitive t 3),4) AR E AR I D=6.
6 A, V DD=50 V Avalanche current, repetitive t 3),4) AR I AR MOSFET dv /dt ruggedness dv /dt V DS=0.
.
.
480 V Gate source voltage V GS static AC (f >1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Mounting torque M2.
5 screws Rev.
2.
2 Rev.
2.
3 page 1 Page 1 Value 16 10 51 436 0.
66 6.
6 50 ±20 ±30 34 -55 .
.
.
150 50 Unit A mJ A V/ns V W °C Ncm 2011-12-20 2018-02-14 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current2) Diode pulse current3) Reverse diode dv /dt 5) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPA60R199CP Value 16 51 15 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded Soldering temperature, wavesoldering only allowed at leads T sold 1.
6 mm (0.
063 in.
) from case for 10 s Values Unit min.
typ.
max.
- - 3.
7 K/W - - 80 - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance ...


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