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A19T

UMW
Part Number A19T
Manufacturer UMW
Published Sep 15, 2019
Description MOSFET
Detailed Description UMW R UMW 3401C SOT-23 Plastic-Encapsulate MOSFETS UMW 3401C P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX -20 V ...
Datasheet PDF File A19T PDF File

A19T
A19T



Overview
UMW R UMW 3401C SOT-23 Plastic-Encapsulate MOSFETS UMW 3401C P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX -20 V   120 mΩ@-4.
5V  150 mΩ@-2.
5V   ID 2.
5 A SOT-23 1.
GATE 2.
SOURCE 3.
DRAIN FEATURE TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices z DC/DC Converter MARKING A19T Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤5s) Junction Temperature Storage Temperature VDS VGS ID IDM IS PD RθJA TJ Tstg Value -20 ±8 -2.
5 -10 -0.
72 0.
35 357 150 -55 ~+150 Unit V A W ℃/W ℃ www.
umw-ic.
com 1 UMW R UMW 3401C SOT-23 Plastic-Encapsulate MOSFETS Ta=25 ℃ unless otherwise specified Parameter Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance a Forward transconductance a Dynamicb Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Symbol Test Condition V(BR)DSS VGS(th) IGSS IDSS RDS(on) gfs VGS = 0V, ID =-250µA VDS =VGS, ID =-250µA VDS =0V, VGS =±8V VDS =-20V, VGS =0V VGS =-4.
5V, ID =-2.
8A VGS =-2.
5V, ID =-2.
0A VDS =-5V, ID =-2.
8A Ciss Coss Crss Qg VDS =-10V,VGS =0V,f =1MHz VDS =-10V,VGS =-4.
5V,ID =-3A Gate-source charge Gate-drain charge Gate resistance Turn-on delay time Qgs Qgd Rg td(on) Rise time tr Turn-off delay time td(off) Fall time tf Drain-source body diode characteristics VDS =-10V,VGS =-2.
5V,ID =-3A f =1MHz VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.
5V,Rg=1Ω Continuous source-drain diode current IS TC=25℃ Pulse diode forward current a ISM Body diode voltage VSD IS=-0.
7A Notes : a.
Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.
b.
Guaranteed by design, not subject to production testing.
Min Typ Max Units -20 -0.
4 -1 ±100 -1 0.
095 0.
120...



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