UMW R
UMW 3401C SOT-23 Plastic-Encapsulate MOSFETS
UMW 3401C P-Channel 20-V(D-S) MOSFET
V(BR)DSS
RDS(on)MAX
-20 V
120 mΩ@-4. 5V 150 mΩ@-2. 5V
ID
2. 5 A
SOT-23
1. GATE 2. SOURCE 3. DRAIN
FEATURE TrenchFET Power MOSFET
APPLICATION z Load Switch for Portable Devices
z DC/DC Converter
MARKING
A19T
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤5s) Junction Temperature Storage Temperature
VDS VGS ID IDM IS PD RθJA TJ Tstg
Value
-20 ±8 -2. 5 -10 -0. 72 0. 35 357 150 -55 ~+150
Unit V
A
W ℃/W ℃
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UMW R
UMW 3401C SOT-23 Plastic-Encapsulate MOSFETS
Ta=25 ℃ unless otherwise specified
Parameter Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current
Drain-source on-state resistance a
Forward transconductance a Dynamicb Input capacitance Output capacitance Reverse transfer capacitance
Total gate charge
Symbol Test Condition
V(BR)DSS VGS(th) IGSS IDSS
RDS(on)
gfs
VGS = 0V, ID =-250µA VDS =VGS, ID =-250µA VDS =0V, VGS =±8V VDS =-20V, VGS =0V VGS =-4. 5V, ID =-2. 8A VGS =-2. 5V, ID =-2. 0A VDS =-5V, ID =-2. 8A
Ciss Coss Crss
Qg
VDS =-10V,VGS =0V,f =1MHz VDS =-10V,VGS =-4. 5V,ID =-3A
Gate-source charge Gate-drain charge Gate resistance Turn-on delay time
Qgs Qgd Rg td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Drain-source body diode characteristics
VDS =-10V,VGS =-2. 5V,ID =-3A
f =1MHz
VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4. 5V,Rg=1Ω
Continuous source-drain diode current IS TC=25℃
Pulse diode forward current a
ISM
Body diode voltage
VSD IS=-0. 7A
Notes : a. Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Units
-20 -0. 4 -1
±100 -1
0. 095 0. 120...